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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRLL2705PBF
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IRLL2705PBF

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Reference Price(In US Dollars)

In stock
1+
$1.03
10+
$0.901
100+
$0.695
500+
$0.515
1000+
$0.412
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Specifications
  • Part Number
    IRLL2705PBF
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 55V 3.8A SOT223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±16V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-223
  • Series
    HEXFET®
  • Rds On (Max) @ Id, Vgs
    40 mOhm @ 3.8A, 10V
  • Power Dissipation (Max)
    1W (Ta)
  • Packaging
    Tube
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    SP001558810
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4V, 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Detailed Description
    N-Channel 55V 3.8A (Ta) 1W (Ta) Surface Mount SOT-223
  • Current - Continuous Drain (Id) @ 25°C
    3.8A (Ta)
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