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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IRLML6302GTRPBF
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6121048IRLML6302GTRPBF ImageInfineon Technologies

IRLML6302GTRPBF

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Reference Price(In US Dollars)

In stock
1+
$0.38
10+
$0.31
100+
$0.211
500+
$0.158
1000+
$0.119
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Specifications
  • Part Number
    IRLML6302GTRPBF
  • Manufacturer/Brand
    Cypress Semiconductor (Infineon Technologies)
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 20V 0.78A SOT-23-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IRLML6302GTRPBF.pdf
  • ECAD Model
  • Voltage - Test
    97pF @ 15V
  • Voltage - Breakdown
    Micro3™/SOT-23
  • Vgs(th) (Max) @ Id
    600 mOhm @ 610mA, 4.5V
  • Vgs (Max)
    2.7V, 4.5V
  • Technology
    MOSFET (Metal Oxide)
  • Series
    HEXFET®
  • RoHS Status
    Cut Tape (CT)
  • Rds On (Max) @ Id, Vgs
    780mA (Ta)
  • Polarization
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    IRLML6302GTRPBFCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    10 Weeks
  • Manufacturer Part Number
    IRLML6302GTRPBF
  • Input Capacitance (Ciss) (Max) @ Vds
    3.6nC @ 4.5V
  • IGBT Type
    ±12V
  • Gate Charge (Qg) (Max) @ Vgs
    1.5V @ 250µA
  • FET Feature
    P-Channel
  • Expanded Description
    P-Channel 20V 780mA (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23
  • Drain to Source Voltage (Vdss)
    -
  • Description
    MOSFET P-CH 20V 0.78A SOT-23-3
  • Current - Continuous Drain (Id) @ 25°C
    20V
  • Capacitance Ratio
    540mW (Ta)

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