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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > SIDC30D120E6X1SA2
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SIDC30D120E6X1SA2

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Specifications
  • Part Number
    SIDC30D120E6X1SA2
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    DIODE GEN PURP 1.2KV 35A WAFER
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
  • ECAD Model
  • Voltage - Forward (Vf) (Max) @ If
    1.9V @ 35A
  • Voltage - DC Reverse (Vr) (Max)
    1200V
  • Supplier Device Package
    Sawn on foil
  • Speed
    Standard Recovery >500ns, > 200mA (Io)
  • Series
    -
  • Packaging
    Bulk
  • Package / Case
    Die
  • Other Names
    SIDC30D120E6
    SIDC30D120E6-ND
    SP000011946
  • Operating Temperature - Junction
    -55°C ~ 150°C
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Diode Type
    Standard
  • Detailed Description
    Diode Standard 1200V 35A (DC) Surface Mount Sawn on foil
  • Current - Reverse Leakage @ Vr
    27µA @ 1200V
  • Current - Average Rectified (Io)
    35A (DC)
  • Capacitance @ Vr, F
    -
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Description: DIODE GEN PURP 1.7KV 50A WAFER

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Description: DIODE GEN PURP 1.2KV 35A WAFER

Manufacturers: International Rectifier (Infineon Technologies)
In stock
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Description: DIODE GEN PURP 1.2KV 50A WAFER

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