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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SPP03N60S5HKSA1
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1277541SPP03N60S5HKSA1 ImageInternational Rectifier (Infineon Technologies)

SPP03N60S5HKSA1

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Specifications
  • Part Number
    SPP03N60S5HKSA1
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 3.2A TO-220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • Vgs(th) (Max) @ Id
    5.5V @ 135µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    PG-TO220-3-1
  • Series
    CoolMOS™
  • Rds On (Max) @ Id, Vgs
    1.4 Ohm @ 2A, 10V
  • Power Dissipation (Max)
    38W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Other Names
    SPP03N60S5
    SPP03N60S5IN
    SPP03N60S5IN-ND
    SPP03N60S5X
    SPP03N60S5XTIN
    SPP03N60S5XTIN-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    420pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 3.2A (Tc) 38W (Tc) Through Hole PG-TO220-3-1
  • Current - Continuous Drain (Id) @ 25°C
    3.2A (Tc)
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Description: MOSFET N-CH 650V 3.2A TO-220AB

Manufacturers: International Rectifier (Infineon Technologies)
In stock
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Description: LOW POWER_LEGACY

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In stock
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Description: LOW POWER_LEGACY

Manufacturers: International Rectifier (Infineon Technologies)
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Description: LOW POWER_LEGACY

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