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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTD123EK,115
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PDTD123EK,115

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Specifications
  • Part Number
    PDTD123EK,115
  • Manufacturer/Brand
    Freescale / NXP Semiconductors
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 250MW SMT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PDTD123EK,115.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 2.5mA, 50mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    SMT3; MPAK
  • Series
    -
  • Resistor - Emitter Base (R2)
    2.2 kOhms
  • Resistor - Base (R1)
    2.2 kOhms
  • Power - Max
    250mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    934058967115
    PDTD123EK T/R
    PDTD123EK T/R-ND
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 250mW Surface Mount SMT3; MPAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA
  • Base Part Number
    PDTD123

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