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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTD114EQAZ
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3463013PDTD114EQAZ ImageNexperia

PDTD114EQAZ

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Reference Price(In US Dollars)

In stock
5000+
$0.053
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Specifications
  • Part Number
    PDTD114EQAZ
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    TRANS PREBIAS NPN 3DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PDTD114EQAZ.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    100mV @ 2.5mA, 50mA
  • Transistor Type
    NPN - Pre-Biased
  • Supplier Device Package
    DFN1010D-3
  • Series
    Automotive, AEC-Q101
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    10 kOhms
  • Power - Max
    325mW
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    3-XDFN Exposed Pad
  • Other Names
    934069269147
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    210MHz
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 500mA 210MHz 325mW Surface Mount DFN1010D-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 50mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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