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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PHM30NQ10T,518
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PHM30NQ10T,518

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Specifications
  • Part Number
    PHM30NQ10T,518
  • Manufacturer/Brand
    Freescale / NXP Semiconductors
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 37.6A 8HVSON
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PHM30NQ10T,518.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-HVSON (6x5)
  • Series
    TrenchMOS™
  • Rds On (Max) @ Id, Vgs
    20 mOhm @ 18A, 10V
  • Power Dissipation (Max)
    62.5W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    8-VDFN Exposed Pad
  • Other Names
    934057308518
    PHM30NQ10T /T3
    PHM30NQ10T /T3-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3600pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    53.7nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 37.6A (Tc) 62.5W (Tc) Surface Mount 8-HVSON (6x5)
  • Current - Continuous Drain (Id) @ 25°C
    37.6A (Tc)

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