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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PMXB65UPEZ
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3652519PMXB65UPEZ ImageNexperia

PMXB65UPEZ

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Reference Price(In US Dollars)

In stock
1+
$0.56
10+
$0.394
100+
$0.259
500+
$0.153
1000+
$0.118
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Specifications
  • Part Number
    PMXB65UPEZ
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 12V 3.2A DFN1010D-3G
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PMXB65UPEZ.pdf
  • Vgs(th) (Max) @ Id
    1V @ 250µA
  • Vgs (Max)
    ±8V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DFN1010D-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    72 mOhm @ 3.2A, 4.5V
  • Power Dissipation (Max)
    317mW (Ta), 8.33W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    3-XDFN Exposed Pad
  • Other Names
    1727-2177-1
    568-12342-1
    568-12342-1-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    8 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    634pF @ 6V
  • Gate Charge (Qg) (Max) @ Vgs
    12nC @ 4.5V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    1.2V, 4.5V
  • Drain to Source Voltage (Vdss)
    12V
  • Detailed Description
    P-Channel 12V 3.2A (Ta) 317mW (Ta), 8.33W (Tc) Surface Mount DFN1010D-3
  • Current - Continuous Drain (Id) @ 25°C
    3.2A (Ta)

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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