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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PMXB360ENEAZ
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266234PMXB360ENEAZ ImageNexperia

PMXB360ENEAZ

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Reference Price(In US Dollars)

In stock
1+
$0.50
10+
$0.393
100+
$0.27
500+
$0.185
1000+
$0.139
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Specifications
  • Part Number
    PMXB360ENEAZ
  • Manufacturer/Brand
    Nexperia
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 1.1A 3DFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    PMXB360ENEAZ.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.7V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    DFN1010D-3
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    450 mOhm @ 1.1A, 10V
  • Power Dissipation (Max)
    400mW (Ta), 6.25W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    3-XDFN Exposed Pad
  • Other Names
    1727-1474-6
    568-10945-6
    568-10945-6-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    130pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    4.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 1.1A (Ta) 400mW (Ta), 6.25W (Tc) Surface Mount DFN1010D-3
  • Current - Continuous Drain (Id) @ 25°C
    1.1A (Ta)

New ICs From Rohm, Toshiba, and Nexperia Target Automotive ...

October 9th, 2024
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