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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NP80N055NDG-S18-AY
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NP80N055NDG-S18-AY

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Specifications
  • Part Number
    NP80N055NDG-S18-AY
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 55V 80A TO-262
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NP80N055NDG-S18-AY.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-262
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    6.9 mOhm @ 40A, 10V
  • Power Dissipation (Max)
    1.8W (Ta), 115W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-262-3 Long Leads, I²Pak, TO-262AA
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6900pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    135nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    55V
  • Detailed Description
    N-Channel 55V 80A (Tc) 1.8W (Ta), 115W (Tc) Through Hole TO-262
  • Current - Continuous Drain (Id) @ 25°C
    80A (Tc)

New MCUs Enhance Performance, Efficiency, and Security for ...

October 28th, 2024

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October 7th, 2024
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