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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > NP83P06PDG-E1-AY
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3848401NP83P06PDG-E1-AY ImageRenesas Electronics America

NP83P06PDG-E1-AY

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Specifications
  • Part Number
    NP83P06PDG-E1-AY
  • Manufacturer/Brand
    Renesas Electronics Corporation
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 60V 83A TO-263
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    NP83P06PDG-E1-AY.pdf
  • Vgs(th) (Max) @ Id
    2.5V @ 1mA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-263
  • Series
    -
  • Rds On (Max) @ Id, Vgs
    8.8 mOhm @ 41.5A, 10V
  • Power Dissipation (Max)
    1.8W (Ta), 150W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    NP83P06PDG-E1-AY-ND
    NP83P06PDG-E1-AYTR
  • Operating Temperature
    175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    10100pF @ 10V
  • Gate Charge (Qg) (Max) @ Vgs
    190nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    4.5V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    P-Channel 60V 83A (Tc) 1.8W (Ta), 150W (Tc) Surface Mount TO-263
  • Current - Continuous Drain (Id) @ 25°C
    83A (Tc)

New MCUs Enhance Performance, Efficiency, and Security for ...

October 28th, 2024

Renesas Expands ADAS SoC Portfolio with R-Car V4M and V4H S...

October 7th, 2024
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