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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGW80H65DFB-4
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5610474STGW80H65DFB-4 ImageSTMicroelectronics

STGW80H65DFB-4

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Reference Price(In US Dollars)

In stock
600+
$9.714
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Specifications
  • Part Number
    STGW80H65DFB-4
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    IGBT BIPO 650V 80A TO247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STGW80H65DFB-4.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 80A
  • Test Condition
    400V, 80A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    84ns/280ns
  • Switching Energy
    2.1mJ (on), 1.5mJ (off)
  • Supplier Device Package
    TO-247-4L
  • Series
    -
  • Reverse Recovery Time (trr)
    85ns
  • Power - Max
    469W
  • Packaging
    Tube
  • Package / Case
    TO-247-4
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    414nC
  • Detailed Description
    IGBT Trench Field Stop 650V 120A 469W Through Hole TO-247-4L
  • Current - Collector Pulsed (Icm)
    240A
  • Current - Collector (Ic) (Max)
    120A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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