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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGW8M120DF3
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304231STGW8M120DF3 ImageSTMicroelectronics

STGW8M120DF3

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Reference Price(In US Dollars)

In stock
1+
$4.03
30+
$3.234
120+
$2.947
510+
$2.386
1020+
$2.013
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Specifications
  • Part Number
    STGW8M120DF3
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    TRENCH GATE FIELD-STOP IGBT M SE
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.STGW8M120DF3.pdf
    2.STGW8M120DF3.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 8A
  • Test Condition
    600V, 8A, 33 Ohm, 15V
  • Td (on/off) @ 25°C
    20ns/126ns
  • Switching Energy
    390µJ (on), 370µJ (Off)
  • Supplier Device Package
    TO-247-3
  • Series
    M
  • Reverse Recovery Time (trr)
    103ns
  • Power - Max
    167W
  • Package / Case
    TO-247-3
  • Other Names
    497-17619
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    32nC
  • Detailed Description
    IGBT Trench Field Stop 1200V 16A 167W Through Hole TO-247-3
  • Current - Collector Pulsed (Icm)
    32A
  • Current - Collector (Ic) (Max)
    16A

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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