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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STH160N4LF6-2
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5773687STH160N4LF6-2 ImageSTMicroelectronics

STH160N4LF6-2

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Reference Price(In US Dollars)

In stock
1+
$2.15
10+
$1.939
100+
$1.558
500+
$1.212
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Specifications
  • Part Number
    STH160N4LF6-2
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 40V 120A H2PAK-2
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STH160N4LF6-2.pdf
  • Vgs(th) (Max) @ Id
    1V @ 250µA (Min)
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    H2Pak-2
  • Series
    DeepGATE™, STripFET™ VI
  • Rds On (Max) @ Id, Vgs
    2.2 mOhm @ 60A, 10V
  • Power Dissipation (Max)
    150W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    497-15466-6
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    8130pF @ 20V
  • Gate Charge (Qg) (Max) @ Vgs
    181nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Detailed Description
    N-Channel 40V 120A (Tc) 150W (Tc) Surface Mount H2Pak-2
  • Current - Continuous Drain (Id) @ 25°C
    120A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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