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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > STH180N10F3-6
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4047202STH180N10F3-6 ImageSTMicroelectronics

STH180N10F3-6

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Reference Price(In US Dollars)

In stock
1+
$6.20
10+
$5.538
100+
$4.541
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Specifications
  • Part Number
    STH180N10F3-6
  • Manufacturer/Brand
    STMicroelectronics
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 180A H2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    STH180N10F3-6.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    H2PAK-6
  • Series
    STripFET™ III
  • Rds On (Max) @ Id, Vgs
    4.5 mOhm @ 60A, 10V
  • Power Dissipation (Max)
    315W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-263-7, D²Pak (6 Leads + Tab)
  • Other Names
    497-11840-1
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    6665pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    114.6nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6
  • Current - Continuous Drain (Id) @ 25°C
    180A (Tc)

STMicroelectronics Unveils Next-Gen SiC MOSFETs for Enhance...

September 27th, 2024
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