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Home > Products > Discrete Semiconductor Products > Diodes - Rectifiers - Single > 1N4446TR
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37185531N4446TR ImageAMI Semiconductor / ON Semiconductor

1N4446TR

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Specifications
  • Part Number
    1N4446TR
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    DIODE GEN PURP 100V 200MA DO35
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1N4446TR.pdf
  • ECAD Model
  • Voltage - Forward (Vf) (Max) @ If
    1V @ 20mA
  • Voltage - DC Reverse (Vr) (Max)
    100V
  • Supplier Device Package
    DO-35
  • Speed
    Small Signal =< 200mA (Io), Any Speed
  • Series
    -
  • Reverse Recovery Time (trr)
    4ns
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    DO-204AH, DO-35, Axial
  • Operating Temperature - Junction
    175°C (Max)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Diode Type
    Standard
  • Detailed Description
    Diode Standard 100V 200mA Through Hole DO-35
  • Current - Reverse Leakage @ Vr
    25nA @ 20V
  • Current - Average Rectified (Io)
    200mA
  • Capacitance @ Vr, F
    4pF @ 0V, 1MHz
  • Base Part Number
    1N4446

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