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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N5551G
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2N5551G

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Specifications
  • Part Number
    2N5551G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 160V 0.6A TO-92
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2N5551G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 5mA, 50mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-92-3
  • Series
    -
  • Power - Max
    625mW
  • Packaging
    Bulk
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Other Names
    2N5551G-ND
    2N5551GOS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    300MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    80 @ 10mA, 5V
  • Current - Collector Cutoff (Max)
    50nA (ICBO)
  • Current - Collector (Ic) (Max)
    600mA
  • Base Part Number
    2N5551

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