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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SB1215S-E
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31148962SB1215S-E ImageAMI Semiconductor / ON Semiconductor

2SB1215S-E

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Reference Price(In US Dollars)

In stock
1+
$1.00
10+
$0.897
100+
$0.699
500+
$0.578
1000+
$0.456
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Specifications
  • Part Number
    2SB1215S-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 100V 3A TP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SB1215S-E.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 150mA, 1.5A
  • Transistor Type
    PNP
  • Supplier Device Package
    TP
  • Series
    -
  • Power - Max
    1W
  • Packaging
    Bulk
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    130MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 100V 3A 130MHz 1W Through Hole TP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    140 @ 500mA, 5V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    3A
  • Base Part Number
    2SB1215

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