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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SC3332T-AA
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2SC3332T-AA

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Specifications
  • Part Number
    2SC3332T-AA
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 160V 0.7A NP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SC3332T-AA.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    160V
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 25mA, 250mA
  • Transistor Type
    NPN
  • Supplier Device Package
    3-NP
  • Series
    -
  • Power - Max
    700mW
  • Packaging
    Tape & Box (TB)
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Other Names
    2SC3332T-AA-ND
    2SC3332T-AAOSTB
    2SC3332T-AAOSTR
    2SC3332T-AAOSTR-ND
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    120MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 160V 700mA 120MHz 700mW Through Hole 3-NP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    700mA
  • Base Part Number
    2SC3332

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