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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SD1628G-TD-E
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66996382SD1628G-TD-E ImageON Semiconductor

2SD1628G-TD-E

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Reference Price(In US Dollars)

In stock
1+
$0.54
10+
$0.461
100+
$0.344
500+
$0.27
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Specifications
  • Part Number
    2SD1628G-TD-E
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 20V 5A SOT89-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    2SD1628G-TD-E.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    5A
  • Voltage - Breakdown
    PCP
  • Vce Saturation (Max) @ Ib, Ic
    20V
  • Series
    -
  • RoHS Status
    Cut Tape (CT)
  • Resistor - Base (R1) (Ohms)
    120MHz
  • Power - Max
    500mW
  • Polarization
    TO-243AA
  • Other Names
    2SD1628G-TD-EOSCT
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    13 Weeks
  • Manufacturer Part Number
    2SD1628G-TD-E
  • Frequency - Transition
    120 @ 500mA, 2V
  • Expanded Description
    Bipolar (BJT) Transistor NPN 20V 5A 120MHz 500mW Surface Mount PCP
  • Description
    TRANS NPN 20V 5A SOT89-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100nA (ICBO)
  • Current - Collector Cutoff (Max)
    500mV @ 60mA, 3A
  • Current - Collector (Ic) (Max)
    NPN

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