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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BD1376S
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966774BD1376S ImageAMI Semiconductor / ON Semiconductor

BD1376S

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Specifications
  • Part Number
    BD1376S
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 60V 1.5A TO-126
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BD1376S.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-126
  • Series
    -
  • Power - Max
    1.25W
  • Packaging
    Bulk
  • Package / Case
    TO-225AA, TO-126-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 60V 1.5A 1.25W Through Hole TO-126
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA, 2V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    1.5A
  • Base Part Number
    BD137

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