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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BD435
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3108569BD435 ImageAMI Semiconductor / ON Semiconductor

BD435

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Specifications
  • Part Number
    BD435
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 32V 4A TO-225AA
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    BD435.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    32V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 200mA, 2A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-225AA
  • Series
    -
  • Power - Max
    36W
  • Packaging
    Bulk
  • Package / Case
    TO-225AA, TO-126-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    3MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 32V 4A 3MHz 36W Through Hole TO-225AA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    85 @ 500mA, 1V
  • Current - Collector Cutoff (Max)
    100µA (ICBO)
  • Current - Collector (Ic) (Max)
    4A
  • Base Part Number
    BD435

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