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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BD677G
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6500020BD677G ImageAMI Semiconductor / ON Semiconductor

BD677G

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Reference Price(In US Dollars)

In stock
1+
$0.69
10+
$0.605
100+
$0.464
500+
$0.367
1000+
$0.293
Inquiry Online
Specifications
  • Part Number
    BD677G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 60V 4A TO225
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BD677G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Vce Saturation (Max) @ Ib, Ic
    2.5V @ 30mA, 1.5A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-225AA
  • Series
    -
  • Power - Max
    40W
  • Packaging
    Bulk
  • Package / Case
    TO-225AA, TO-126-3
  • Other Names
    BD677G-ND
    BD677GOS
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    18 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    750 @ 1.5A, 3V
  • Current - Collector Cutoff (Max)
    500µA
  • Current - Collector (Ic) (Max)
    4A
  • Base Part Number
    BD677

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