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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BD810
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576387BD810 ImageAMI Semiconductor / ON Semiconductor

BD810

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Specifications
  • Part Number
    BD810
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 80V 10A TO-220AB
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Datasheets
    BD810.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    1.1V @ 300mA, 3A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    90W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Contains lead / RoHS non-compliant
  • Frequency - Transition
    1.5MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 4A, 2V
  • Current - Collector Cutoff (Max)
    1mA (ICBO)
  • Current - Collector (Ic) (Max)
    10A

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