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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BSS64LT1G
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6258351BSS64LT1G ImageAMI Semiconductor / ON Semiconductor

BSS64LT1G

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Reference Price(In US Dollars)

In stock
1+
$0.22
10+
$0.204
100+
$0.111
500+
$0.069
1000+
$0.047
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Specifications
  • Part Number
    BSS64LT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 80V 0.1A SOT-23
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BSS64LT1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    80V
  • Vce Saturation (Max) @ Ib, Ic
    200mV @ 15mA, 50mA
  • Transistor Type
    NPN
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Series
    -
  • Power - Max
    225mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    BSS64LT1GOSCT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    60MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 80V 100mA 60MHz 225mW Surface Mount SOT-23-3 (TO-236)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    20 @ 10mA, 1V
  • Current - Collector Cutoff (Max)
    100nA (ICBO)
  • Current - Collector (Ic) (Max)
    100mA
  • Base Part Number
    BSS64

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