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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BUB323ZT4G
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6026392BUB323ZT4G ImageAMI Semiconductor / ON Semiconductor

BUB323ZT4G

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Reference Price(In US Dollars)

In stock
800+
$1.437
1600+
$1.191
2400+
$1.108
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Specifications
  • Part Number
    BUB323ZT4G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 350V 10A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    350V
  • Vce Saturation (Max) @ Ib, Ic
    1.7V @ 250mA, 10A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    D2PAK
  • Series
    -
  • Power - Max
    150W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    BUB323ZT4GOS
    BUB323ZT4GOS-ND
    BUB323ZT4GOSTR
  • Operating Temperature
    -65°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    2MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Surface Mount D2PAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    500 @ 5A, 4.6V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    10A
  • Base Part Number
    BUB323
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