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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > BUL642D2G
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4336602BUL642D2G ImageAMI Semiconductor / ON Semiconductor

BUL642D2G

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Specifications
  • Part Number
    BUL642D2G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 440V 3A TO-220AB
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    BUL642D2G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    440V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 200mA, 2A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-220AB
  • Series
    -
  • Power - Max
    75W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    13MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 440V 3A 13MHz 75W Through Hole TO-220AB
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    16 @ 500mA, 1V
  • Current - Collector Cutoff (Max)
    200µA
  • Current - Collector (Ic) (Max)
    3A

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