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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCMT299N60
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6612209FCMT299N60 ImageAMI Semiconductor / ON Semiconductor

FCMT299N60

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Reference Price(In US Dollars)

In stock
3000+
$1.889
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Specifications
  • Part Number
    FCMT299N60
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 600V 12A POWER88
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FCMT299N60.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    Power88
  • Series
    SuperFET® II
  • Rds On (Max) @ Id, Vgs
    299 mOhm @ 6A, 10V
  • Power Dissipation (Max)
    125W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    4-PowerTSFN
  • Other Names
    FCMT299N60TR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    52 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1948pF @ 380V
  • Gate Charge (Qg) (Max) @ Vgs
    51nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    600V
  • Detailed Description
    N-Channel 600V 12A (Ta) 125W (Tc) Surface Mount Power88
  • Current - Continuous Drain (Id) @ 25°C
    12A (Ta)

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