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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FCU850N80Z
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6392111FCU850N80Z ImageAMI Semiconductor / ON Semiconductor

FCU850N80Z

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Reference Price(In US Dollars)

In stock
1+
$2.50
10+
$2.254
100+
$1.811
500+
$1.409
1000+
$1.167
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Specifications
  • Part Number
    FCU850N80Z
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 800V 6A IPAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FCU850N80Z.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.5V @ 600µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    IPAK (TO-251)
  • Series
    SuperFET® II
  • Rds On (Max) @ Id, Vgs
    850 mOhm @ 3A, 10V
  • Power Dissipation (Max)
    75W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-251-3 Short Leads, IPak, TO-251AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    52 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1315pF @ 100V
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    800V
  • Detailed Description
    N-Channel 800V 6A (Tc) 75W (Tc) Through Hole IPAK (TO-251)
  • Current - Continuous Drain (Id) @ 25°C
    6A (Tc)

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