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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDA20N50-F109
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2354811FDA20N50-F109 ImageAMI Semiconductor / ON Semiconductor

FDA20N50-F109

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Reference Price(In US Dollars)

In stock
1+
$4.66
10+
$4.163
450+
$3.08
900+
$2.498
1350+
$2.331
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Specifications
  • Part Number
    FDA20N50-F109
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 500V 22A TO-3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDA20N50-F109.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    5V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-3PN
  • Series
    UniFET™
  • Rds On (Max) @ Id, Vgs
    230 mOhm @ 11A, 10V
  • Power Dissipation (Max)
    280W (Tc)
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Other Names
    FDA20N50
    FDA20N50-ND
    FDA20N50_F109
    FDA20N50_F109-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    3120pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    59.5nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    500V
  • Detailed Description
    N-Channel 500V 22A (Tc) 280W (Tc) Through Hole TO-3PN
  • Current - Continuous Drain (Id) @ 25°C
    22A (Tc)

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