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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDD86369
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3060846FDD86369 ImageAMI Semiconductor / ON Semiconductor

FDD86369

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Reference Price(In US Dollars)

In stock
2500+
$0.769
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Specifications
  • Part Number
    FDD86369
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CHANNEL 80V 90A TO252
  • Lead Free Status / RoHS Status
  • Datasheets
    FDD86369.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-252, (D-Pak)
  • Series
    Automotive, AEC-Q101, PowerTrench®
  • Rds On (Max) @ Id, Vgs
    7.9 mOhm @ 80A, 10V
  • Power Dissipation (Max)
    150W (Tj)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-252-3, DPak (2 Leads + Tab), SC-63
  • Other Names
    FDD86369-ND
    FDD86369OSTR
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Input Capacitance (Ciss) (Max) @ Vds
    2530pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    54nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 90A (Tc) 150W (Tj) Surface Mount TO-252, (D-Pak)
  • Current - Continuous Drain (Id) @ 25°C
    90A (Tc)

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