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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > FDMS3660S-F121
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2899801FDMS3660S-F121 ImageAMI Semiconductor / ON Semiconductor

FDMS3660S-F121

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Specifications
  • Part Number
    FDMS3660S-F121
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET 2N-CH 30V 13A/30A 8-PQFN
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDMS3660S-F121.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2.7V @ 250µA
  • Supplier Device Package
    Power56
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    8 mOhm @ 13A, 10V
  • Power - Max
    1W
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerTDFN
  • Other Names
    FDMS3660S-F121CT
    FDMS3660S_F121CT
    FDMS3660S_F121CT-ND
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    1765pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    29nC @ 10V
  • FET Type
    2 N-Channel (Dual) Asymmetrical
  • FET Feature
    Logic Level Gate
  • Drain to Source Voltage (Vdss)
    30V
  • Detailed Description
    Mosfet Array 2 N-Channel (Dual) Asymmetrical 30V 13A, 30A 1W Surface Mount Power56
  • Current - Continuous Drain (Id) @ 25°C
    13A, 30A

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