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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMS86163P
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FDMS86163P

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Reference Price(In US Dollars)

In stock
1+
$2.77
10+
$2.504
100+
$2.012
500+
$1.565
1000+
$1.297
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Specifications
  • Part Number
    FDMS86163P
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET P-CH 100V 7.9A POWER56
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDMS86163P.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4V @ 250µA
  • Vgs (Max)
    ±25V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    8-PQFN (5x6)
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    22 mOhm @ 7.9A, 10V
  • Power Dissipation (Max)
    2.5W (Ta), 104W (Tc)
  • Packaging
    Original-Reel®
  • Package / Case
    8-PowerTDFN
  • Other Names
    FDMS86163PDKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    34 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    4085pF @ 50V
  • Gate Charge (Qg) (Max) @ Vgs
    59nC @ 10V
  • FET Type
    P-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    P-Channel 100V 7.9A (Ta), 50A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6)
  • Current - Continuous Drain (Id) @ 25°C
    7.9A (Ta), 50A (Tc)

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