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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDMS86350ET80
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4625366FDMS86350ET80 ImageAMI Semiconductor / ON Semiconductor

FDMS86350ET80

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Specifications
  • Part Number
    FDMS86350ET80
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 80V 80A POWER56
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FDMS86350ET80.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    4.5V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    Power56
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    2.4 mOhm @ 25A, 10V
  • Power Dissipation (Max)
    3.3W (Ta), 187W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    8-PowerTDFN
  • Other Names
    FDMS86350ET80CT
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    8030pF @ 40V
  • Gate Charge (Qg) (Max) @ Vgs
    155nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    8V, 10V
  • Drain to Source Voltage (Vdss)
    80V
  • Detailed Description
    N-Channel 80V 25A (Ta), 198A (Tc) 3.3W (Ta), 187W (Tc) Surface Mount Power56
  • Current - Continuous Drain (Id) @ 25°C
    25A (Ta), 198A (Tc)

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