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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FDN5630
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FDN5630

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Reference Price(In US Dollars)

In stock
1+
$0.51
10+
$0.426
100+
$0.32
500+
$0.234
1000+
$0.181
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Specifications
  • Part Number
    FDN5630
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 60V 1.7A SSOT3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FDN5630.pdf
    2.FDN5630.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SuperSOT-3
  • Series
    PowerTrench®
  • Rds On (Max) @ Id, Vgs
    100 mOhm @ 1.7A, 10V
  • Power Dissipation (Max)
    500mW (Ta)
  • Packaging
    Original-Reel®
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Other Names
    FDN5630_F095DKR
    FDN5630_F095DKR-ND
    FDN5630DKR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    42 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    400pF @ 15V
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    6V, 10V
  • Drain to Source Voltage (Vdss)
    60V
  • Detailed Description
    N-Channel 60V 1.7A (Ta) 500mW (Ta) Surface Mount SuperSOT-3
  • Current - Continuous Drain (Id) @ 25°C
    1.7A (Ta)

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