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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGH60T65SQD-F155
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6654777FGH60T65SQD-F155 ImageAMI Semiconductor / ON Semiconductor

FGH60T65SQD-F155

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Reference Price(In US Dollars)

In stock
1+
$4.43
10+
$3.978
450+
$3.092
900+
$2.775
1350+
$2.34
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Specifications
  • Part Number
    FGH60T65SQD-F155
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    650V 60A FS4 TRENCH IGBT
  • Lead Free Status / RoHS Status
  • Datasheets
    FGH60T65SQD-F155.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    650V
  • Vce(on) (Max) @ Vge, Ic
    2.1V @ 15V, 60A
  • Test Condition
    400V, 15A, 4.7 Ohm, 15V
  • Td (on/off) @ 25°C
    20.8ns/102ns
  • Switching Energy
    227µJ (on), 100µJ (off)
  • Supplier Device Package
    TO-247-3
  • Series
    -
  • Reverse Recovery Time (trr)
    34.6ns
  • Power - Max
    333W
  • Package / Case
    TO-247-3
  • Other Names
    FGH60T65SQD-F155-ND
    FGH60T65SQD-F155OS
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • Lead Free Status
    Lead free
  • Input Type
    Standard
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    79nC
  • Detailed Description
    IGBT Trench Field Stop 650V 120A 333W Through Hole TO-247-3
  • Current - Collector Pulsed (Icm)
    240A
  • Current - Collector (Ic) (Max)
    120A

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