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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGL60N100BNTDTU
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2680868FGL60N100BNTDTU ImageAMI Semiconductor / ON Semiconductor

FGL60N100BNTDTU

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Reference Price(In US Dollars)

In stock
375+
$3.876
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Specifications
  • Part Number
    FGL60N100BNTDTU
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 1000V 60A 180W TO264
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGL60N100BNTDTU.pdf
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Vce(on) (Max) @ Vge, Ic
    2.9V @ 15V, 60A
  • Test Condition
    600V, 60A, 51 Ohm, 15V
  • Td (on/off) @ 25°C
    140ns/630ns
  • Switching Energy
    -
  • Supplier Device Package
    TO-264
  • Series
    -
  • Reverse Recovery Time (trr)
    1.2µs
  • Power - Max
    180W
  • Packaging
    Tube
  • Package / Case
    TO-264-3, TO-264AA
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT and Trench
  • Gate Charge
    275nC
  • Detailed Description
    IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264
  • Current - Collector Pulsed (Icm)
    120A
  • Current - Collector (Ic) (Max)
    60A

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