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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGP10N60UNDF
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FGP10N60UNDF

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Reference Price(In US Dollars)

In stock
1+
$2.01
10+
$1.809
100+
$1.454
800+
$1.194
1600+
$0.99
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Specifications
  • Part Number
    FGP10N60UNDF
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 20A 139W TO220-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FGP10N60UNDF.pdf
    2.FGP10N60UNDF.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.45V @ 15V, 10A
  • Test Condition
    400V, 10A, 10 Ohm, 15V
  • Td (on/off) @ 25°C
    8ns/52.2ns
  • Switching Energy
    150µJ (on), 50µJ (off)
  • Supplier Device Package
    TO-220-3
  • Series
    -
  • Reverse Recovery Time (trr)
    37.7ns
  • Power - Max
    139W
  • Packaging
    Tube
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    NPT
  • Gate Charge
    37nC
  • Detailed Description
    IGBT NPT 600V 20A 139W Through Hole TO-220-3
  • Current - Collector Pulsed (Icm)
    30A
  • Current - Collector (Ic) (Max)
    20A

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