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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > FGY75N60SMD
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2860033FGY75N60SMD ImageAMI Semiconductor / ON Semiconductor

FGY75N60SMD

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Reference Price(In US Dollars)

In stock
1+
$6.25
10+
$5.644
450+
$4.463
900+
$4.069
1350+
$3.544
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Specifications
  • Part Number
    FGY75N60SMD
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    IGBT 600V 150A 750W POWER-247
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FGY75N60SMD.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    600V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 75A
  • Test Condition
    400V, 75A, 3 Ohm, 15V
  • Td (on/off) @ 25°C
    24ns/136ns
  • Switching Energy
    2.3mJ (on), 770µJ (off)
  • Supplier Device Package
    PowerTO-247-3
  • Series
    -
  • Reverse Recovery Time (trr)
    55ns
  • Power - Max
    750W
  • Packaging
    Tube
  • Package / Case
    TO-247-3 Variant
  • Other Names
    FGY75N60SMD-ND
    FGY75N60SMDFS
  • Operating Temperature
    -55°C ~ 175°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    Standard
  • IGBT Type
    Field Stop
  • Gate Charge
    248nC
  • Detailed Description
    IGBT Field Stop 600V 150A 750W Through Hole PowerTO-247-3
  • Current - Collector Pulsed (Icm)
    225A
  • Current - Collector (Ic) (Max)
    150A

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