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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FJA4210OTU
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2720040FJA4210OTU ImageAMI Semiconductor / ON Semiconductor

FJA4210OTU

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Reference Price(In US Dollars)

In stock
1+
$2.08
10+
$1.873
450+
$1.414
900+
$1.237
1350+
$1.025
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Specifications
  • Part Number
    FJA4210OTU
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 140V 10A TO-3P
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    140V
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 500mA, 5A
  • Transistor Type
    PNP
  • Supplier Device Package
    TO-3P
  • Series
    -
  • Power - Max
    100W
  • Packaging
    Tube
  • Package / Case
    TO-3P-3, SC-65-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    30MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 140V 10A 30MHz 100W Through Hole TO-3P
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    70 @ 3A, 4V
  • Current - Collector Cutoff (Max)
    10µA (ICBO)
  • Current - Collector (Ic) (Max)
    10A
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