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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > FJB3307DTM
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1132567FJB3307DTM ImageAMI Semiconductor / ON Semiconductor

FJB3307DTM

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Reference Price(In US Dollars)

In stock
800+
$0.593
1600+
$0.468
2400+
$0.437
5600+
$0.416
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Specifications
  • Part Number
    FJB3307DTM
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 400V 8A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    FJB3307DTM.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    400V
  • Vce Saturation (Max) @ Ib, Ic
    3V @ 2A, 8A
  • Transistor Type
    NPN
  • Supplier Device Package
    D²PAK
  • Series
    -
  • Power - Max
    1.72W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    FJB3307DTMTR
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    2 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN 400V 8A 1.72W Surface Mount D²PAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5 @ 5A, 5V
  • Current - Collector Cutoff (Max)
    -
  • Current - Collector (Ic) (Max)
    8A
  • Base Part Number
    FJB3307

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