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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQNL2N50BTA
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5821948FQNL2N50BTA ImageAMI Semiconductor / ON Semiconductor

FQNL2N50BTA

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Reference Price(In US Dollars)

In stock
1+
$1.03
10+
$0.912
100+
$0.721
500+
$0.559
1000+
$0.441
Inquiry Online
Specifications
  • Part Number
    FQNL2N50BTA
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 500V 0.35A TO-92-3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FQNL2N50BTA.pdf
    2.FQNL2N50BTA.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    3.7V @ 250µA
  • Vgs (Max)
    ±30V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    TO-92-3
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    5.3 Ohm @ 175mA, 10V
  • Power Dissipation (Max)
    1.5W (Tc)
  • Packaging
    Cut Tape (CT)
  • Package / Case
    TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Other Names
    FQNL2N50BTACT
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    6 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    230pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    8nC @ 10V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    10V
  • Drain to Source Voltage (Vdss)
    500V
  • Detailed Description
    N-Channel 500V 350mA (Tc) 1.5W (Tc) Through Hole TO-92-3
  • Current - Continuous Drain (Id) @ 25°C
    350mA (Tc)

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