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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQPF19N10L

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FQPF19N10L Image

AMI Semiconductor / ON Semiconductor

FQPF19N10L

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Specifications

Part Number

FQPF19N10L
Manufacturer/Brand

AMI Semiconductor/onsemi
Stock Quantity

In stock
Description

MOSFET N-CH 100V 13.6A TO-220F
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Datasheets

FQPF19N10L.pdf
ECAD Model
Vgs(th) (Max) @ Id

2V @ 250µA
Vgs (Max)

±20V
Technology

MOSFET (Metal Oxide)
Supplier Device Package

TO-220F
Series

QFET®
Rds On (Max) @ Id, Vgs

100 mOhm @ 6.8A, 10V
Power Dissipation (Max)

38W (Tc)
Packaging

Tube
Package / Case

TO-220-3 Full Pack
Operating Temperature

-55°C ~ 175°C (TJ)
Mounting Type

Through Hole
Moisture Sensitivity Level (MSL)

1 (Unlimited)
Lead Free Status / RoHS Status

Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds

870pF @ 25V
Gate Charge (Qg) (Max) @ Vgs

18nC @ 5V
FET Type

N-Channel
FET Feature

-
Drive Voltage (Max Rds On, Min Rds On)

5V, 10V
Drain to Source Voltage (Vdss)

100V
Detailed Description

N-Channel 100V 13.6A (Tc) 38W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C

13.6A (Tc)

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