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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > FQT7N10LTF
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1043949

FQT7N10LTF

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Reference Price(In US Dollars)

In stock
4000+
$0.237
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Specifications
  • Part Number
    FQT7N10LTF
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    MOSFET N-CH 100V 1.7A SOT-223
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.FQT7N10LTF.pdf
    2.FQT7N10LTF.pdf
  • ECAD Model
  • Vgs(th) (Max) @ Id
    2V @ 250µA
  • Vgs (Max)
    ±20V
  • Technology
    MOSFET (Metal Oxide)
  • Supplier Device Package
    SOT-223-4
  • Series
    QFET®
  • Rds On (Max) @ Id, Vgs
    350 mOhm @ 850mA, 10V
  • Power Dissipation (Max)
    2W (Tc)
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-261-4, TO-261AA
  • Other Names
    FQT7N10LTFTR
  • Operating Temperature
    -55°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    21 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Capacitance (Ciss) (Max) @ Vds
    290pF @ 25V
  • Gate Charge (Qg) (Max) @ Vgs
    6nC @ 5V
  • FET Type
    N-Channel
  • FET Feature
    -
  • Drive Voltage (Max Rds On, Min Rds On)
    5V, 10V
  • Drain to Source Voltage (Vdss)
    100V
  • Detailed Description
    N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4
  • Current - Continuous Drain (Id) @ 25°C
    1.7A (Tc)

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