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Home > Products > Isolators > Optoisolators - Transistor, Photovoltaic Output > H11G2M
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3575520H11G2M ImageAMI Semiconductor / ON Semiconductor

H11G2M

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Reference Price(In US Dollars)

In stock
1+
$1.12
10+
$0.869
100+
$0.62
500+
$0.472
1000+
$0.372
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Specifications
  • Part Number
    H11G2M
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    OPTOISO 4.17KV DARL W/BASE 6DIP
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    H11G2M.pdf
  • ECAD Model
  • Voltage - Output (Max)
    80V
  • Voltage - Isolation
    4170Vrms
  • Voltage - Forward (Vf) (Typ)
    1.3V
  • Vce Saturation (Max)
    1V
  • Turn On / Turn Off Time (Typ)
    5µs, 100µs
  • Supplier Device Package
    6-DIP
  • Series
    -
  • Rise / Fall Time (Typ)
    -
  • Packaging
    Tube
  • Package / Case
    6-DIP (0.300", 7.62mm)
  • Output Type
    Darlington with Base
  • Operating Temperature
    -40°C ~ 100°C
  • Number of Channels
    1
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    9 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Input Type
    DC
  • Detailed Description
    Optoisolator Darlington with Base Output 4170Vrms 1 Channel 6-DIP
  • Current Transfer Ratio (Min)
    1000% @ 10mA
  • Current Transfer Ratio (Max)
    -
  • Current - Output / Channel
    -
  • Current - DC Forward (If) (Max)
    60mA

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