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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > IMD10AMT1G
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6616123IMD10AMT1G ImageAMI Semiconductor / ON Semiconductor

IMD10AMT1G

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Reference Price(In US Dollars)

In stock
1+
$0.46
10+
$0.345
100+
$0.215
500+
$0.147
1000+
$0.113
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Specifications
  • Part Number
    IMD10AMT1G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN/PNP PREBIAS SC74R
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    IMD10AMT1G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    50V
  • Vce Saturation (Max) @ Ib, Ic
    300mV @ 1mA, 10mA
  • Transistor Type
    1 NPN, 1 PNP - Pre-Biased (Dual)
  • Supplier Device Package
    SC-74R
  • Series
    -
  • Resistor - Emitter Base (R2)
    10 kOhms
  • Resistor - Base (R1)
    13 kOhms, 130 Ohms
  • Power - Max
    285mW
  • Packaging
    Cut Tape (CT)
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Other Names
    IMD10AMT1GOSCT
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    9 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 500mA 285mW Surface Mount SC-74R
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    100 @ 1mA, 5V / 68 @ 100mA, 5V
  • Current - Collector Cutoff (Max)
    500nA
  • Current - Collector (Ic) (Max)
    500mA

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