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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > KSD560Y
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KSD560Y

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Specifications
  • Part Number
    KSD560Y
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN DARL 100V 5A TO-220
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    1.KSD560Y.pdf
    2.KSD560Y.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 3mA, 3A
  • Transistor Type
    NPN - Darlington
  • Supplier Device Package
    TO-220-3
  • Series
    -
  • Power - Max
    1.5W
  • Packaging
    Bulk
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    -
  • Detailed Description
    Bipolar (BJT) Transistor NPN - Darlington 100V 5A 1.5W Through Hole TO-220-3
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    5000 @ 3A, 2V
  • Current - Collector Cutoff (Max)
    1µA (ICBO)
  • Current - Collector (Ic) (Max)
    5A
  • Base Part Number
    KSD560

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