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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ21196G
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3633195MJ21196G ImageAMI Semiconductor / ON Semiconductor

MJ21196G

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Reference Price(In US Dollars)

In stock
1+
$4.21
10+
$3.778
100+
$3.096
500+
$2.635
1000+
$2.223
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Specifications
  • Part Number
    MJ21196G
  • Manufacturer/Brand
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 250V 16A TO3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    250V
  • Vce Saturation (Max) @ Ib, Ic
    4V @ 3.2A, 16A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-204 (TO-3)
  • Series
    -
  • Power - Max
    250W
  • Packaging
    Tray
  • Package / Case
    TO-204AA, TO-3
  • Other Names
    MJ21196GOS
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    4 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    4MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 250V 16A 4MHz 250W Through Hole TO-204 (TO-3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 8A, 5V
  • Current - Collector Cutoff (Max)
    100µA
  • Current - Collector (Ic) (Max)
    16A
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