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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJ802G
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4602184MJ802G ImageAMI Semiconductor / ON Semiconductor

MJ802G

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Reference Price(In US Dollars)

In stock
1+
$3.91
10+
$3.509
100+
$2.875
500+
$2.447
1000+
$2.064
Inquiry Online
Specifications
  • Part Number
    MJ802G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS NPN 90V 30A TO3
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJ802G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    90V
  • Vce Saturation (Max) @ Ib, Ic
    800mV @ 750mA, 7.5A
  • Transistor Type
    NPN
  • Supplier Device Package
    TO-204 (TO-3)
  • Series
    -
  • Power - Max
    200W
  • Packaging
    Tray
  • Package / Case
    TO-204AA, TO-3
  • Other Names
    MJ802GOS
  • Operating Temperature
    -65°C ~ 200°C (TJ)
  • Mounting Type
    Through Hole
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    16 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    2MHz
  • Detailed Description
    Bipolar (BJT) Transistor NPN 90V 30A 2MHz 200W Through Hole TO-204 (TO-3)
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 7.5A, 2V
  • Current - Collector Cutoff (Max)
    1mA (ICBO)
  • Current - Collector (Ic) (Max)
    30A
  • Base Part Number
    MJ802

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