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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > MJB42CT4G
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5648213MJB42CT4G ImageAMI Semiconductor / ON Semiconductor

MJB42CT4G

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Reference Price(In US Dollars)

In stock
800+
$0.712
1600+
$0.562
2400+
$0.525
5600+
$0.50
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Specifications
  • Part Number
    MJB42CT4G
  • Manufacturer/Brand
    AMI Semiconductor/onsemi
  • Stock Quantity
    In stock
  • Description
    TRANS PNP 100V 6A D2PAK
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Datasheets
    MJB42CT4G.pdf
  • ECAD Model
  • Voltage - Collector Emitter Breakdown (Max)
    100V
  • Vce Saturation (Max) @ Ib, Ic
    1.5V @ 600mA, 6A
  • Transistor Type
    PNP
  • Supplier Device Package
    D2PAK
  • Series
    -
  • Power - Max
    2W
  • Packaging
    Tape & Reel (TR)
  • Package / Case
    TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Other Names
    MJB42CT4GOS
    MJB42CT4GOS-ND
    MJB42CT4GOSTR
  • Operating Temperature
    -65°C ~ 150°C (TJ)
  • Mounting Type
    Surface Mount
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Manufacturer Standard Lead Time
    26 Weeks
  • Lead Free Status / RoHS Status
    Lead free / RoHS Compliant
  • Frequency - Transition
    3MHz
  • Detailed Description
    Bipolar (BJT) Transistor PNP 100V 6A 3MHz 2W Surface Mount D2PAK
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 3A, 4V
  • Current - Collector Cutoff (Max)
    700µA
  • Current - Collector (Ic) (Max)
    6A
  • Base Part Number
    MJB42

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